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Si4835DDY PDF预览

Si4835DDY

更新时间: 2024-11-20 01:19:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 177K
描述
P-Channel 30-V (D-S) MOSFET

Si4835DDY 数据手册

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New Product  
Si4835DDY  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)d  
Available  
TrenchFET® Power MOSFET  
100 % Rg Tested  
100 % UIS Tested  
0.018 at VGS = - 10 V  
0.030 at VGS = - 4.5 V  
- 13  
- 10  
- 30  
22 nC  
APPLICATIONS  
Load Switches  
- Notebook PCs  
- Desktop PCs  
SO-8  
S
S
S
S
G
1
2
3
4
8
7
6
5
D
D
G
D
D
Top View  
D
Ordering Information: Si4835DDY-T1-E3 (Lead (Pb)-free)  
Si4835DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 30  
25  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
- 13  
- 10.5  
- 8.7a, b  
- 7.7a, b  
- 50  
Continuous Drain Current (TJ = 150 °C)  
ID  
T
A
IDM  
IS  
Pulsed Drain Current  
- 4.6  
2.0a, b  
T
C = 25 °C  
A = 25 °C  
Continuous Source-Drain Diode Current  
T
IAS  
Avalanche Current  
- 20  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
5.6  
3.6  
PD  
Maximum Power Dissipation  
2.5a, b  
1.6a, b  
- 55 to 150  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
Maximum  
Unit  
Maximum Junction-to-Ambienta, c  
t 10 s  
Steady State  
39  
18  
50  
22  
°C/W  
Maximum Junction-to-Foot  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under Steady State conditions is 85 °C/W.  
d. Based on TC = 25 °C.  
Document Number: 69953  
S09-0136-Rev. B, 02-Feb-09  
www.vishay.com  
1

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