Datasheet > SI4124DY

SI4124DY

更新时间： 2024-02-05 17:07:13

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
N-Channel 40-V (D-S) MOSFET

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SI4124DY 数据手册

New Product

Si4124DY

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^d

20.5

Available

•

TrenchFET^®Power MOSFET

100 % R_gTested

0.0075 at V_GS= 10 V

0.009 at V_GS= 4.5 V

21 nC

18.7

APPLICATIONS

•

Synchronous Rectification

DC/DC

SO-8

Top View

Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free)

Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

20.5

_C= 70 °C

_A= 25 °C

16.4

Continuous Drain Current (T_J= 150 °C)

I_D

13.6^{a, b}

10.9^{a, b}

T_A= 70 °C

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

T_A= 25 °C

_C= 25 °C

4.7

2.1^{a, b}

Continuous Source-Drain Diode Current

I_S

5.7

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.6

Maximum Power Dissipation

P_D

2.5^{a, b}

1.6^{a, b}

- 55 to 150

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

Document Number: 68601

S09-0392-Rev. B, 09-Mar-09

www.vishay.com

12 3 4 5 6 7

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