5秒后页面跳转
SI4133W PDF预览

SI4133W

更新时间: 2024-02-14 04:10:17
品牌 Logo 应用领域
芯科 - SILICON GSM无线通信
页数 文件大小 规格书
32页 515K
描述
RF SYNTHESIZER WITH INTEGRATED VCOS FOR W-CDMA AND GSM/UMTS WIRELESS COMMUNICATIONS

SI4133W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFN
包装说明:HVQCCN,针数:28
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.7模拟集成电路 - 其他类型:PHASE LOCKED LOOP
JESD-30 代码:S-XQCC-N28长度:5 mm
功能数量:1端子数量:28
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:0.9 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES温度等级:OTHER
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmBase Number Matches:1

SI4133W 数据手册

 浏览型号SI4133W的Datasheet PDF文件第2页浏览型号SI4133W的Datasheet PDF文件第3页浏览型号SI4133W的Datasheet PDF文件第4页浏览型号SI4133W的Datasheet PDF文件第5页浏览型号SI4133W的Datasheet PDF文件第6页浏览型号SI4133W的Datasheet PDF文件第7页 
Si4133W  
RF SYNTHESIZER WITH INTEGRATED VCOS  
FOR W-CDMA AND GSM/UMTS WIRELESS COMMUNICATIONS  
Features  
Dual RF synthesizers  
RF1: 2.3 GHz to 2.6 GHz  
RF2: 750 MHz to 1.7 GHz  
IF synthesizer  
Continuous operation over a  
wide temperature range  
Fast settling time: 200 µsec  
Low phase noise  
IF: 62.5 MHz to 1.0 GHz  
5 µA standby current  
Ordering Information:  
Integrated VCOs, loop filters, 28-lead MLP, 5 x 5 mm  
dividers, and phase detectors  
See page 28.  
Minimal external components  
Pin Assignments  
Applications  
Si4133W-BM  
Single-mode W-CDMA wireless Dual-mode GSM/UMTS wireless  
handsets, terminals, and  
modems  
handsets, terminals, and  
modems  
GNDR  
RFLD  
RFLC  
GNDR  
NC  
GNDI  
IFLB  
Description  
IFLA  
The Si4133W is a monolithic integrated circuit that performs RF and IF  
synthesis for GSM/GPRS and W-CDMA wireless communications. In dual-  
mode GSM/UMTS handsets, the Si4133W meets demanding requirements  
for very low phase noise and fast settling time for both modes. The Si4133W  
integrates three complete phase-locked loops (PLLs) on a single die  
including VCOs, loop filters, reference and VCO dividers, and phase  
detectors. Dividers and powerdown settings are programmable through a  
three-wire serial interface.  
GNDD  
VDDD  
GNDR  
GNDR  
GNDD  
XIN  
Patents pending  
Functional Block Diagram  
Reference  
XIN  
÷R  
÷R  
÷R  
Phase  
Amplifier  
Detector  
RF1  
RF2  
IF  
Power  
Down  
PWDNB  
RFOUT  
÷N  
÷N  
÷N  
Control  
SDATA  
SCLK  
RFLC  
RFLD  
Serial  
Interface  
Phase  
Detector  
22-bit  
Data  
SENB  
Register  
Test  
Mux  
Phase  
Detector  
AUXOUT  
IFDIV  
IFOUT  
IFLA  
IFLB  
Rev. 1.1 9/02  
Copyright © 2002 by Silicon Laboratories  
Si4133W-DS11  

与SI4133W相关器件

型号 品牌 获取价格 描述 数据表
SI4133W-BM SILICON

获取价格

RF SYNTHESIZER WITH INTEGRATED VCOS FOR W-CDMA AND GSM/UMTS WIRELESS COMMUNICATIONS
SI4133W-D-GM SILICON

获取价格

RF and Baseband Circuit, 5 X 5 MM, ROHS COMPLIANT, QFN-28
SI4134DY VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI4134DY_11 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SI4134DY-T1-E3 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SI4134DY-T1-GE3 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SI4134T-BM SILICON

获取价格

RF and Baseband Circuit, CMOS, 5 X 5 MM, QFN-32
SI4134T-BMR SILICON

获取价格

RF and Baseband Circuit, CMOS, 5 X 5 MM, QFN-32
SI4134T-GM SILICON

获取价格

RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32
SI4134T-GMR SILICON

获取价格

RF and Baseband Circuit, CMOS, 5 X 5 MM, LEAD FREE, QFN-32