Datasheet > SI3442BDV_09

SI3442BDV_09

更新时间： 2022-03-29 08:01:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	183K
描述
N-Channel 2.5-V (G-S) MOSFET

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数据手册

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SI3442BDV_09 数据手册

AN823

Vishay Siliconix

10 s (max)

255 − 260_C

1X4_C/s (max)

3-6_C/s (max)

217_C

140 − 170_C

60 s (max)

3_C/s (max)

60-120 s (min)

Reflow Zone

Pre-Heating Zone

Maximum peak temperature at 240_C is allowed.

FIGURE 3. Solder Reflow Temperature and Time Durations

THERMAL PERFORMANCE

On-Resistance vs. Junction Temperature

A basic measure of a device’s thermal performance is the

junction-to-case thermal resistance, Rq_jc, or the

junction-to-foot thermal resistance, Rq_jf. This parameter is

measured for the device mounted to an infinite heat sink and

is therefore a characterization of the device only, in other

words, independent of the properties of the object to which the

device is mounted. Table 1 shows the thermal performance

of the TSOP-6.

1.6

1.4

1.2

1.0

0.8

0.6

= 4.5 V

= 6.1 A

TABLE 1.

Equivalent Steady State Performance—TSOP-6

Thermal Resistance Rq

30_C/W

−50 −25

100 125 150

SYSTEM AND ELECTRICAL IMPACT OF

TSOP-6

− Junction Temperature (_C)

FIGURE 4. Si3434DV

In any design, one must take into account the change in

MOSFET r_DS(on)with temperature (Figure 4).

Document Number: 71743

27-Feb-04

www.vishay.com

1...4 5 678 9

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