Datasheet > SI3442BDV_09

SI3442BDV_09

更新时间： 2022-03-29 08:01:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	183K
描述
N-Channel 2.5-V (G-S) MOSFET

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SI3442BDV_09 数据手册

Si3442BDV

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

480

400

320

240

160

0.14

0.12

= 2.5 V

0.10

0.08

0.06

0.04

0.02

0.00

iss

= 4.5 V

oss

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- Drain-to-Source Voltage (V)

- Drain Current (A)

On-Resistance vs. Drain Current

Capacitance

1.4

1.2

1.0

0.8

0.6

= 4.5 V

= 10 V

= 4 A

- 50 - 25

100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T - Junction Temperature (°C)

- Total Gate Charge (nC)

Gate Charge

On-Resistance vs. Junction Temperature

0.20

0.16

0.12

0.08

0.04

0.00

= 150 °C

0.1

= 4 A

= 25 °C

0.01

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

- Gate-to-Source Voltage (V)

- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72504

S09-2110-Rev. E, 12-Oct-09

www.vishay.com

1 234 5 6 7...9

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