Datasheet > SI3442BDV_09

SI3442BDV_09

更新时间： 2022-03-29 08:01:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	183K
描述
N-Channel 2.5-V (G-S) MOSFET

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SI3442BDV_09 数据手册

Si3442BDV

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.3

0.2

0.1

= 250 µA

0.0

- 0.1

- 0.2

- 0.3

- 0.4

- 0.5

- 0.6

= 25 °C

Single Pulse

- 50 - 25

100 125 150

0.01

0.1

100

600

Time (s)

- Temperature (°C)

Single Pulse Power

Threshold Voltage

100

Limited

Limited by R

DS(on)*

10 µs

100 µs

1 ms

10 ms

= 25 °C

100 ms

1 s, 10 s

100 s, DC

0.1

Single Pulse

BVDSS Limited

0.01

0.1

100

- Drain-to-Source Voltage (V)

* V > minimum V at which R is specified

DS(on)

Safe Operating Area

Duty Cycle = 0.5

0.2

0.1

Notes:

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R

= 120 °C/W

thJA

(t)

3. T_JM- T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

-4

-3

-2

-1

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?72504.

www.vishay.com

Document Number: 72504

S09-2110-Rev. E, 12-Oct-09

1 2 345 6 7...9

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