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SI1070X-T1-E3 PDF预览

SI1070X-T1-E3

更新时间: 2024-11-25 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 98K
描述
N-Channel 30-V (D-S) MOSFET

SI1070X-T1-E3 数据手册

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Si1070X  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
1.2a  
1.0  
0.099 at VGS = 4.5 V  
0.140 at VGS = 2.5 V  
RoHS  
30  
3.5  
COMPLIANT  
APPLICATIONS  
Load Switch for Portable Devices  
SC-89 (6-LEADS)  
D
D
G
1
2
3
6
D
D
S
Marking Code  
XX  
5
4
U
Lot Traceability  
and Date Code  
Part # Code  
Top View  
Ordering Information: Si1070X-T1-E3 (Lead (Pb)-free)  
Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
1.2b, c  
1b, c  
6
TA = 25 °C  
A = 70 °C  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
A
IDM  
IAS  
EAS  
IS  
Pulsed Drain Current  
Avalanche Current  
9
L = 0.1 mH  
Repetitive Avalanche Energy  
Continuous Source-Drain Diode Current  
4.01  
0.2b, c  
0.236b, c  
0.151b, c  
mJ  
A
TA = 25 °C  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
440  
Maximum  
Unit  
t 5 s  
530  
650  
Maximum Junction-to-Ambientb, d  
RthJA  
°C/W  
Steady State  
540  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 650 °C/W.  
Document Number: 73893  
S-81528-Rev. C, 30-Jun-08  
www.vishay.com  
1

SI1070X-T1-E3 替代型号

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SI1070X-T1-GE3 VISHAY

完全替代

N-Channel 30-V (D-S) MOSFET
SI1072X-T1-GE3 VISHAY

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