5秒后页面跳转
SI1073X-T1-GE3 PDF预览

SI1073X-T1-GE3

更新时间: 2024-11-25 06:11:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 137K
描述
P-Channel 30-V (D-S) MOSFET

SI1073X-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:8.47
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.98 A最大漏源导通电阻:0.173 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.236 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1073X-T1-GE3 数据手册

 浏览型号SI1073X-T1-GE3的Datasheet PDF文件第2页浏览型号SI1073X-T1-GE3的Datasheet PDF文件第3页浏览型号SI1073X-T1-GE3的Datasheet PDF文件第4页浏览型号SI1073X-T1-GE3的Datasheet PDF文件第5页浏览型号SI1073X-T1-GE3的Datasheet PDF文件第6页 
New Product  
Si1073X  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free Option Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
- 0.98a  
- 0.83  
0.173 at VGS = - 10 V  
0.243 at VGS = - 4.5 V  
RoHS  
- 30  
3.25  
COMPLIANT  
APPLICATIONS  
Load Switch  
SC-89 (6-LEADS)  
S
D
D
G
1
2
3
6
D
D
S
Marking Code  
XX  
1
5
4
Lot Traceability  
and Date Code  
G
Part # Code  
Top View  
D
Ordering Information: Si1073X-T1-E3 (Lead (Pb)-free)  
Si1073X-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 30  
V
VGS  
20  
- 0.98b, c  
- 0.78b, c  
- 8  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IAS  
EAS  
IS  
Pulsed Drain Current  
Avalanche Current  
- 6  
L = 0.1 mH  
Repetitive Avalanche Energy  
Continuous Source-Drain Diode Current  
1.8  
0.2b, c  
mJ  
A
TA = 25 °C  
0.236b, c  
0.151b, c  
TA = 25 °C  
TA = 70 °C  
W
Maximum Power Dissipationa  
PD  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
440  
Maximum  
Unit  
t 5 s  
Steady State  
530  
650  
Maximum Junction-to-Ambientb, d  
RthJA  
°C/W  
540  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 650 °C/W.  
Document Number: 74285  
S-82617-Rev. C, 03-Nov-08  
www.vishay.com  
1

与SI1073X-T1-GE3相关器件

型号 品牌 获取价格 描述 数据表
Si1077X VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
Si1078X VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
Si1079X VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
Si1080-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
Si1081-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
Si1082-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
Si1083-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
Si1084-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
Si1085-A-GM SILICON

获取价格

MCU with Integrated 240–960 MHz EZRadioPROÂ
SI-10SL0390MP HITACHI

获取价格

Isolator, 380MHz Min, 400MHz Max,