Datasheet > Si1077X

Si1077X

更新时间： 2024-11-26 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	166K
描述
P-Channel 20 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si1077X 数据手册

Si1077X

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

V_DS(V)

R_DS(on)() Max.

0.078 at V_GS= - 4.5 V

0.098 at V_GS= - 2.5 V

0.130 at V_GS= - 1.8 V

0.188 at V_GS= - 1.5 V

I_D(A)

- 1.4

- 1

Q_g(Typ.)

Typical ESD Performance 2500 V

100 % R_gTested

Material categorization:

- 20

12.1 nC

For definitions of compliance please see

www.vishay.com/doc?99912

- 1

- 0.3

APPLICATIONS

•

Load Switch for Portable Devices

Power Management

SC-89 (6-LEADS)

Marking Code

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 1.75^{b, c}

- 1.4^{b, c}

- 8

T_A= 25 °C

_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

- 0.28^{b, c}

0.33^{b, c}

0.21^{b, c}

T_A= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

P_D

Maximum Power Dissipation

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

300

Maximum

Unit

t 5 s

375

450

Maximum Junction-to-Ambient^{a, b}

R_thJA

°C/W

Steady State

360

Notes:

a. Maximum under steady state conditions is 450 °C/W.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

Document Number: 63254

S12-3081-Rev. A, 24-Dec-12

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与Si1077X相关器件

型号	品牌	获取价格	描述	数据表
Si1078X	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
Si1079X	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
Si1080-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
Si1081-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
Si1082-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
Si1083-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
Si1084-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
Si1085-A-GM	SILICON	获取价格	MCU with Integrated 240â960 MHz EZRadioPROÂ
SI-10SL0390MP	HITACHI	获取价格	Isolator, 380MHz Min, 400MHz Max,
SI-10SL0390MP-T	HITACHI	获取价格	Isolator, 380MHz Min, 400MHz Max,