Datasheet > Si1078X

Si1078X

更新时间： 2024-11-26 14:54:47

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威世 - VISHAY		/
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描述
N-Channel 30 V (D-S) MOSFET

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Si1078X 数据手册

Si1078X

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

0.142 at V_GS= 10 V

0.154 at V_GS= 4 V

0.195 at V_GS= 2.5 V

I_D(A)

1.02

0.98

0.87

Q_g(TYP.)

• 100 % R_gtested

• Typical ESD performance 1400 V

• Material categorization:

1.5

for definitions of compliance please see

www.vishay.com/doc?99912

SC-89 Single (6 leads)

APPLICATIONS

• Load switch for portable devices

Top View

Marking Code: D

Ordering Information:

N-Channel MOSFET

Si1078X-T1-GE3 (lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

1.02 ^{a, b}

0.82 ^{a, b}

0.2 ^{a, b}

0.24 ^{a, b}

0.15 ^{a, b}

-55 to +150

Continuous Drain Current (T_J= 150 °C) ^a

I_D

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

Continuous Source-Drain Diode Current

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t  5 s

440

540

530

650

Maximum Junction-to-Ambient ^{a, c}

R_thJA

°C/W

Steady State

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 650 °C/W.

S16-1056-Rev. A, 30-May-16

Document Number: 68549

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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