SHD123634P
SHD123634N
SHD123634D
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4668, REV. PRELIMINARY
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra Low Reverse Leakage Current
•
•
•
•
•
•
•
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Out Performs 200 Volt Ultra Fast Rectifiers
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
Max.
100
150
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current
50% duty cycle, rectangular
wave form Common Cathode
(N)/Common Anode(P)
50% duty cycle, rectangular
wave form Doubler (D)
8.3 ms, half Sine wave
(per leg)
TJ = 25 °C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
IF(AV)
IFSM
EAS
IAR
120
1000
27
A
A
mJ
A
Repetitive Avalanche
Current
1.3
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
RthJC
TJ
Tstg
Per Package
0.2
-65 to +200
-65 to +200
°C/W
°C
°C
-
-
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
0.99
V
@ 120A, Pulse, TJ = 25 °C
(per leg) measured at the leads
VF2
IR1
IR2
CT
0.84
0.06
6
V
@ 120A, Pulse, TJ = 125 °C
(per leg) measured at the leads
@VR = 100V, Pulse,
TJ = 25 °C (per leg)
@VR = 100V, Pulse,
Max. Reverse Current
mA
mA
pF
TJ = 125 °C (per leg)
Max. Junction Capacitance
3000
@VR = 5 V, TC = 25 °C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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