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SHD123634D PDF预览

SHD123634D

更新时间: 2024-11-18 03:57:31
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描述
POWER SCHOTTKY RECTIFIER Low Reverse Leakage

SHD123634D 数据手册

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SHD123634P  
SHD123634N  
SHD123634D  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 4668, REV. PRELIMINARY  
POWER SCHOTTKY RECTIFIER  
Low Reverse Leakage  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Ultra Low Reverse Leakage Current  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Out Performs 200 Volt Ultra Fast Rectifiers  
Maximum Ratings:  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
Max.  
100  
150  
Units  
V
A
Peak Inverse Voltage  
Max. Average Forward  
Current  
50% duty cycle, rectangular  
wave form Common Cathode  
(N)/Common Anode(P)  
50% duty cycle, rectangular  
wave form Doubler (D)  
8.3 ms, half Sine wave  
(per leg)  
TJ = 25 °C, IAS = 1.3 A,  
L = 40mH (per leg)  
IAS decay linearly to 0 in 1 µs  
ƒ limited by TJ max VA=1.5VR  
Max. Average Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche  
Energy  
IF(AV)  
IFSM  
EAS  
IAR  
120  
1000  
27  
A
A
mJ  
A
Repetitive Avalanche  
Current  
1.3  
Thermal Resistance  
Max. Junction Temperature  
Max. Storage Temperature  
RthJC  
TJ  
Tstg  
Per Package  
0.2  
-65 to +200  
-65 to +200  
°C/W  
°C  
°C  
-
-
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Max. Forward Voltage Drop  
VF1  
0.99  
V
@ 120A, Pulse, TJ = 25 °C  
(per leg) measured at the leads  
VF2  
IR1  
IR2  
CT  
0.84  
0.06  
6
V
@ 120A, Pulse, TJ = 125 °C  
(per leg) measured at the leads  
@VR = 100V, Pulse,  
TJ = 25 °C (per leg)  
@VR = 100V, Pulse,  
Max. Reverse Current  
mA  
mA  
pF  
TJ = 125 °C (per leg)  
Max. Junction Capacitance  
3000  
@VR = 5 V, TC = 25 °C  
fSIG = 1 MHz,  
VSIG = 50mV (p-p) (per leg)  
Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should  
be expected, unlike conventional lower voltage Schottkys.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, Silicon, HERMETIC SEALED PACKAGE-3