Datasheet > SHD123636P_09

SHD123636P_09

更新时间： 2024-11-09 09:26:47

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	42K
描述
POWER SCHOTTKY RECTIFIER Low Reverse Leakage

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中文翻译

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SHD123636P_09 数据手册

SHD123636P

SHD123636N

SHD123636D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 1042, REV. PRELIMINARY

POWER SCHOTTKY RECTIFIER

Low Reverse Leakage

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Ultra Low Reverse Leakage Current

•

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Out Performs 200 Volt Ultra Fast Rectifiers

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

150

Units

Peak Inverse Voltage

Max. Average Forward

Current

50% duty cycle, rectangular

wave form Common Cathode

(N)/Common Anode(P)

50% duty cycle, rectangular

wave form Doubler (D)

8.3 ms, half Sine wave

(per leg)

T_J= 25 °C, I_AS= 1.3 A,

L = 40mH (per leg)

_ASdecay linearly to 0 in 1 μs

ƒ limited by T_Jmax V_A=1.5V_R

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

I_F(AV)

I_FSM

E_AS

I_AR

120

1650

Repetitive Avalanche

Current

1.3

Thermal Resistance

Max. Junction Temperature

Max. Storage Temperature

R_thJC

T_J

T_stg

Per Package

0.2

-65 to +175

°C/W

°C

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Max. Forward Voltage Drop

V_F1

1.07

@ 120A, Pulse, T_J= 25 °C

(per leg) measured at the leads

V_F2

I_R1

I_R2

C_T

0.91

0.6

@ 120A, Pulse, T_J= 125 °C

(per leg) measured at the leads

@V_R= 200V, Pulse,

T_J= 25 °C (per leg)

@V_R= 200V, Pulse,

Max. Reverse Current

6.0

T_J= 125 °C (per leg)

Max. Junction Capacitance

1800

@V_R= 5 V, T_C= 25 °C

f_SIG= 1 MHz,

V_SIG= 50mV (p-p) (per leg)

Due to the nature of the 200V Schottky devices, some degradation in t_rrperformance at high temperatures should

be expected, unlike conventional lower voltage Schottkys.

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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与SHD123636P_09相关器件

型号	品牌	获取价格	描述	数据表
SHD123668D	SENSITRON	获取价格	POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage
SHD123668N	SENSITRON	获取价格	POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage
SHD123668P	SENSITRON	获取价格	POWER SCHOTTKY RECTIFIER Very Low Reverse Leakage
SHD1236DS	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, Silicon, HERMETIC SEALED PACKAGE-3
SHD1236N	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 45V V(RRM), Silicon, HERMETIC, PLASTI
SHD1236NS	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, Silicon, HERMETIC SEALED PACKAGE-3
SHD1236PS	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, Silicon, HERMETIC SEALED PACKAGE-3
SHD1237D	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 100V V(RRM), Silicon, HERMETIC, PLAST
SHD1237DS	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, Silicon, HERMETIC SEALED PACKAGE-3
SHD1237N	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 150A, 100V V(RRM), Silicon, HERMETIC, PLAST

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