SHD118136
SHD118136A
SHD118136B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 913, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Ultra Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra Low Reverse Leakage Current
•
•
•
•
•
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle, rectangular
wave form (per leg)
8.3 ms, half Sine wave
(per leg)
TJ = 25 °C, IAS = 0.4 A,
L = 40mH
AS decay linearly to 0 in 1 µs
Max.
200
7.5
Units
V
A
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
IFSM
EAS
IAR
140
7.7
0.4
A
mJ
A
Repetitive Avalanche Current
I
ƒ limited by TJ max VA=1.5VR
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
-
-
-
0.85
-65 to +200
-65 to +200
RθJC
TJ
Tstg
°C/W
°C
°C
Electrical Characteristics:
Characteristics
Symbol
VF1
Condition
@ 7.5A, Pulse, TJ = 25 °C
@ 7.5A, Pulse, TJ = 125 °C
@VR = 200V, Pulse,
TJ = 25 °C
Max.
0.92
0.76
0.05
Units
V
V
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
VF2
IR1
mA
(per leg)
IR2
CT
@VR = 200V, Pulse,
TJ = 125 °C
0.5
mA
pF
Max. Junction Capacitance
(per leg)
150
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max. Reverse Recovery Time
trr
IF = 0.5 A, IR = 1.0 A,
25
nsec
IRM = 0.25 A, TJ = 25 °C
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