SHD118136P

更新时间： 2024-10-26 13:13:27

品牌	Logo	应用领域
SENSITRON		整流二极管瞄准线功效
页数	文件大小	规格书
3页	105K
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SHD118136P 数据手册

SHD118136

SHD118136B

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 913, REV. B

HERMETIC POWER SCHOTTKY RECTIFIER

Very Low Forward Voltage Drop

Ultra Low Reverse Leakage

Applications:

Switching Power Supply

Converters

Free-Wheeling Diodes

Polarity Protection Diode

Features:

Ultra Low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

50% duty cycle, rectangular

wave form (per leg)

8.3 ms, half Sine wave

(per leg)

T_J= 25 C, I_AS= 0.4 A,

L = 40mH

I_ASdecay linearly to 0 in 1 s

Max.

200

7.5

Units

Peak Inverse Voltage

Max. Average Forward Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

I_FSM

E_AS

I_AR

140

7.7

0.4

Repetitive Avalanche Current

limited by T_Jmax V_A=1.5V_R

Maximum Thermal Resistance

Max. Junction Temperature

Max. Storage Temperature

3.2

-65 to +200

T_J

T_stg

C/W

Electrical Characteristics:

Characteristics

Symbol

V_F1

Condition

@ 7.5A, Pulse, T_J= 25 C

@ 7.5A, Pulse, T_J= 125 C

@V_R= 200V, Pulse,

T_J= 25 C

Max.

0.92

0.76

0.05

Units

Max. Forward Voltage Drop

(per leg)

Max. Reverse Current

V_F2

I_R1

(per leg)

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 C

@V_R= 5V, T_C= 25 C

f_SIG= 1MHz,

0.5

Max. Junction Capacitance

(per leg)

150

V_SIG= 50mV (p-p)

I_F= 0.5 A, I_R= 1.0 A,

I_RM= 0.25 A, T_J= 25 C

Max. Reverse Recovery Time

t_rr

nsec

2000 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681

PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

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