SHD118146
SHD118146A
SHD118146B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 911, REV. -
HERMETIC POWER SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle, rectangular
wave form (per leg)
8.3 ms, half Sine wave
(per leg)
Max.
200
7.5
Units
V
A
Peak Inverse Voltage
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
IFSM
EAS
IAR
140
7.7
0.4
A
mJ
A
TJ = 25 C, VRSM = 0.4 A,
L = 40mH
Repetitive Avalanche Current
IAS decay linearly to 0 in 1 ms
limited by TJ max VA=1.5VR
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
-
-
-
0.85
-65 to +200
-65 to +200
R
TJ
Tstg
C/W
C
C
JC
Electrical Characteristics:
Characteristics
Symbol
VF1
Condition
@ 7.5A, Pulse, TJ = 25 C
@ 7.5A, Pulse, TJ = 125 C
@VR = 200V, Pulse,
TJ = 25 C
Max.
0.92
0.76
0.18
Units
V
V
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
VF2
IR1
mA
(per leg)
IR2
CT
@VR = 200V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
4.0
mA
pF
Max. Junction Capacitance
(per leg)
150
VSIG = 50mV (p-p)
IF = 0.5 A, IR =1.0 A,
IRM = 0.25 A, TJ = 25 C
Max. Reverse Recovery Time
trr
25
nsec
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