Datasheet > SHD115536_08

SHD115536_08

更新时间： 2024-11-19 09:26:51

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描述
HERMETIC SCHOTTKY RECTIFIER Low Forward Voltage Drop

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SHD115536_08 数据手册

SHD115536

SHD115536B

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4556, REV. C

HERMETIC SCHOTTKY RECTIFIER

Low Forward Voltage Drop

Features:

•

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings

Characteristics

Peak Inverse Voltage

Max. Average Forward Current

Symbol

V_RWM

I_F(AV)

Condition

50% duty cycle, rectangular

wave form

Max.

200

Units

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche Energy

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave

860

T_J= 25 °C, I_AS= 3.0 A,

L = 4.4 mH

Repetitive Avalanche Current

3.0

I_ASdecay linearly to 0 in 1 µs

ƒ limited by T_Jmax V_A=1.5V_R

DC operation

Maximum Thermal Resistance

0.35

R_θJC

°C/W

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 60A, Pulse, T_J= 25 °C

@ 60A, Pulse, T_J= 125 °C

@V_R= 200V, Pulse,

T_J= 25 °C

Max.

0.95

0.79

0.3

Units

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 °C

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

3.0

Max. Junction Capacitance

900

V_SIG= 50mV (p-p)

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