Datasheet > SGC-2486Z

SGC-2486Z

更新时间： 2024-09-25 03:32:23

品牌	Logo	应用领域
SIRENZA		射频微波
页数	文件大小	规格书
5页	266K
描述
50-4000 MHz Silicon Germanium Cascadable Gain Block

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SGC-2486Z 数据手册

Preliminary Information

RoHS Compliant

& Green Package

SGC-2486Z

Product Description

Sirenza Microdevices’ SGC-2486Z is a high performance SiGe HBT MMIC

amplifier utilizing a Darlington configuration with a patented active bias

network. The active bias network provides stable current over temperature

and process Beta variations. Designed to run directly from a 3V supply, the

SGC-2486Z does not require a dropping resistor as compared to typical

Darlington amplifiers. The SGC-2486Z is designed for high linearity 3V gain

block applications that require small size and minimal external components.

It is internally matched to 50 ohms.

50-4000 MHz Silicon Germanium

Cascadable Gain Block

The matte tin finish on Sirenza’s lead-free “Z” package is applied using a

post annealing process to mitigate tin whisker formation and is RoHS

compliant per EU Directive 2002/95. The package body is manufactured

with green molding compounds that contain no antimony trioxide or

halogenated fire retardants.

Product Features

• Single Fixed 3V Supply

• Supply Dropping Resistor not required

• Patented Self-Bias Circuitry

• P1dB = 10.4 dBm at 1950 MHz

• IP3 = 24.5 dBm at 1950 MHz

• Robust 1000V ESD, Class 1C HBM

Gain & Return Loss V_D= 3V, I_D= 25mA(Typ.)

S21

-5

-10

-15

-20

-25

S22

Applications

S11

Bias Tee Data, Z_S= Z_L= 50 Ohms, T_L= 25C

• PA Driver Amplifier

• Cellular, PCS, GSM, UMTS

• IF Amplifier

• Wireless Data, Satellite

Frequency (GHz)

Symbol

Parameters

Units

Frequency

Min.

Typ.

Max.

850 MHz

1950 MHz

2400 MHz

850 MHz

1950 MHz

2400 MHz

850 MHz

1950 MHz

2400 MHz

19.4

13.9

12.3

10.5

10.4

10.1

22.9

24.5

24.9

Small Signal Gain

P_1dB

Output Power at 1dB Compression

Output Third Order Intercept Point

dBm

OIP₃

IRL

ORL

Input Return Loss

1950 MHz

1930 MHz

17.9

15.3

3.4

Output Return Loss

Noise Figure

V_D

Device Operating Voltage

Device Operating Current

Thermal Resistance (junction to lead)

I_D

°C/W

Rth, j-l

205

Test Conditions:

V_D= 3.0V

I_D= 25mA Typ.

T_L= 25°C

OIP₃Tone Spacing = 1MHz

Pout per tone = -5 dBm

Bias Tee Data

Z_S= Z_L= 50 Ohms

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

Test Conditions:

303 S. Technology Ct.

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104974 Rev A

12 3 4 5

中文翻译

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