Datasheet > SGC2550S

SGC2550S

更新时间： 2022-10-12 13:41:24

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描述
Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 25A

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SGC2550S 数据手册

SGC2550S thru SGC2560S

Surface Mount Schottky Rectifier

Reverse Voltage 50~60V Forward Current 25A

Features

• Heatsink design

• Schottky barrier diodes

• Low forward voltage drop

• Solder dip 260 °C, 10 s

eSGC (TO‐277)

• Low profile - typical height of 1.1 mm

• Moisture sensitivity: level 1, per J-STD-020

Anode 1

Cathode

• High temperature soldering guaranteed: 260℃/10 seconds

• Halogen-free according to IEC 61249-2-21 definition

& Heatsink

Anode 2

Typical Applications

For low voltage high frequency inverters, DC/DC converters and polarity protection application.

Maximum Ratings (TA = 25 °C unless otherwise noted)

SGC2550S

SGC2560S

Unit

Parameter

Symbol

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

VRRM

VRMS

VDC

25.0

350

Maximum average forward rectified current

IF(AV)

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

IFSM

Operating junction and storage temperature

range

-55 to +150

°C

TJ, TSTG

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Typ

Max

Unit

Parameter

Test Conditions

Symbol

0.29

0.33

0.35

0.39

0.48

0.15

0.20

0.24

0.30

0.45

0.085

I_F=1A

I_F=3A

I_F=5A

0.40

T_A=25℃

I_F=10A

I_F=25A

I_F=1A

0.60

V_F

Volts

Instantaneous forward voltage

0.25

0.30

I_F=3A

I_F=5A

T_A=125℃

I_F=10A

I_F=25A

0.50

0.5

100

T_A=25℃

T_A=100℃

I_R

Reverse current

Rated VR

2.0

C_J

Typical junction capacitance

4.0 V, 1 MHz

1.0

℃/W

juntion to mount

Typical thermal resistance

R_θJM

Note1)Thermal resistance R_θJMis junction to mount,Mounted on Al P.C.B with recommended copper pad area

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1/4

2015.03-Rev.A

12 3 4

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