Datasheet > SGC4363ZPCK1

SGC4363ZPCK1

更新时间： 2022-02-26 10:57:49

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	336K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC4363ZPCK1 数据手册

SGC4363Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

SGC4363Z

Cascadable

Gain Block

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

Features

RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4363Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4363Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Single Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry

=12.4dBm at 1950MHz

1dB



OIP =26.5dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

Optimum Technology

Matching® Applied

Gain & Return Loss V_D= 3V, I_D= 54mA

S21

GaAs HBT

Applications

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA

Bias Tee Data, Z

= ZL

= 50 Ohms, T

= 25C

SiGe HBT



IF Amplifier



S22

S11

-10

-20

-30

GaAs pHEMT

Si CMOS

Wireless Data, Satellite

Si BJT

GaN HEMT

RF MEMS

0.5

1.5

2.5

3.5

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

15.6

11.2

Typ.

17.1

12.7

11.8

13.3

Max.

18.6

14.2

Small Signal Gain, (G)

850MHz

1950MHz

2400MHz

850MHz

Output Power at 1dB Compression

dBm

)

1dB

11.4

12.4

11.8

28.5

dBm

1950MHz

2400MHz

850MHz

Output Third Order Intercept Point

(OIP )

24.5

26.5

25.5

13.5

12.5

4.0

dBm

1950MHz

2400MHz

1950MHz

1930MHz

Input Return Loss, (IRL)

Output Return Loss, (ORL)

Noise Figure (NF)

9.5

8.5

5.0

Thermal Resistance

180

°C/W

(Junction - Lead) (Rth, j-l)

Device Operating Voltage, (V )

3.0

Device Operating Current, (I )

48.0

54.0

60.0

Test Conditions: V =3V, I =54mA Typ., OIP Tone Spacing=1MHz, P

per tone=-5dBm, T =25°C, Z =Z =50, Bias Tee Data

L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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型号	品牌	描述	获取价格	数据表
SGC4363ZPCK2	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC4363ZSQ	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC4363ZSR	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC-4386Z	SIRENZA	50-4000 MHz Silicon Germanium Cascadable Gain Block	获取价格
SGC-4386Z_1	SIRENZA	50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block	获取价格
SGC4463Z	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格

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