Datasheet > SGC-4363Z

SGC-4363Z

更新时间： 2024-01-19 07:56:52

品牌	Logo	应用领域
SIRENZA		/
页数	文件大小	规格书
5页	308K
描述
50-4000 MHz Silicon Germanium Cascadable Gain Block

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技术参数
数据手册

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SGC-4363Z 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.15	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	11.8 dB
最大输入功率 (CW)：	18 dBm	最大工作频率：	4000 MHz
最小工作频率：	50 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

SGC-4363Z 数据手册

Preliminary Information

RoHS Compliant

& Green Package

SGC-4363Z

Product Description

Sirenza Microdevices’ SGC-4363Z is a high performance SiGe HBT MMIC

amplifier utilizing a Darlington configuration with a patented active bias

network. The active bias network provides stable current over temperature

and process Beta variations. Designed to run directly from a 3V supply, the

SGC-4363Z does not require a dropping resistor as compared to typical

Darlington amplifiers. The SGC-4363Z is designed for high linearity 3V gain

block applications that require small size and minimal external components.

It is internally matched to 50 ohms.

50-4000 MHz Silicon Germanium

Cascadable Gain Block

The matte tin finish on Sirenza’s lead-free “Z” package is applied using a

post annealing process to mitigate tin whisker formation and is RoHS

compliant per EU Directive 2002/95. The package body is manufactured

with green molding compounds that contain no antimony trioxide or

halogenated fire retardants.

Product Features

• Single Fixed 3V Supply

• Supply Dropping Resistor not required

• Patented Self-Bias Circuitry

• P1dB = 12.4 dBm at 1950 MHz

• IP3 = 26.6 dBm at 1950 MHz

• Robust 1000V ESD, Class 1C HBM

Gain & Return Loss V_D= 3V, I_D= 52mA(Typ.)

S22

S21

-10

-20

-30

-40

S11

Applications

• PA Driver Amplifier

• Cellular, PCS, GSM, UMTS

• IF Amplifier

Bias Tee Data, Z_S= Z_L= 50 Ohms, T_L= 25C

• Wireless Data, Satellite

Frequency (GHz)

Symbol

Parameters

Small Signal Gain

Units

Frequency

Min.

Typ.

Max.

850 MHz

1950 MHz

2400 MHz

850 MHz

1950 MHz

2400 MHz

850 MHz

1950 MHz

2400 MHz

16.7

13.0

11.8

13.3

12.4

11.8

28.8

26.6

25.5

P_1dB

Output Power at 1dB Compression

Output Third Order Intercept Point

dBm

OIP₃

IRL

ORL

Input Return Loss

1950 MHz

1930 MHz

15.5

12.9

4.0

Output Return Loss

Noise Figure

V_D

Device Operating Voltage

Device Operating Current

Thermal Resistance (junction to lead)

I_D

°C/W

Rth, j-l

180

Test Conditions:

V_D= 3.0V

I_D= 52mA Typ.

T_L= 25°C

OIP₃Tone Spacing = 1MHz

Pout per tone = -5 dBm

Bias Tee Data

Z_S= Z_L= 50 Ohms

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

303 S. Technology Ct.

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104977 Rev A

12 3 4 5

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SGC4363ZPCK1	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC4363ZPCK2	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC4363ZSQ	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC4363ZSR	RFMD	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK	获取价格
SGC-4386Z	SIRENZA	50-4000 MHz Silicon Germanium Cascadable Gain Block	获取价格
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