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SGC4486ZPCK1

更新时间： 2024-11-14 01:03:55
品牌 Logo 应用领域
威讯 - RFMD /
页数 文件大小 规格书
6页 282K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC4486ZPCK1 数据手册

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SGC4486Z  
50MHz to  
4000MHz  
Active Bias Sili-  
con Germa-  
nium  
SGC4486Z  
Cascadable  
Gain Block  
50MHz to 4000MHz ACTIVE BIAS SILICON  
GERMANIUM CASCADABLE GAIN BLOCK  
Package: SOT-86  
Product Description  
Features  
RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utiliz-  
ing a Darlington configuration with a patented active bias network. The  
active bias network provides stable current over temperature and process  
Beta variations. Designed to run directly from a 3V supply, the SGC4486Z  
does not require a dropping resistor as compared to typical Darlington  
amplifiers. The SGC4486Z is designed for high linearity 3V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50Ω.  
Single Fixed 3V Supply  
No Dropping Resistor  
Required  
Patented Self-Bias Circuitry  
P
=12.7dBm at 1950MHz  
1dB  
OIP =27.5dBm at 1950MHz  
3
Robust 1000V ESD, Class 1C  
HBM  
Optimum Technology  
Gain & Return Loss VD = 3V, ID = 52mA  
Matching® Applied  
30  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
S21  
Applications  
20  
10  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS,  
WCDMA  
Bias Tee Data, Z  
S
= ZL  
= 50 Ohms, T  
L
= 25C  
0
IF Amplifier  
S22  
S11  
-10  
-20  
-30  
GaAs pHEMT  
Si CMOS  
Wireless Data, Satellite  
Si BJT  
GaN HEMT  
RF MEMS  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Frequency (GHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
19.0  
13.0  
Typ.  
20.5  
14.5  
12.3  
13.8  
12.7  
12.4  
29.0  
27.5  
26.5  
14.5  
11.5  
3.4  
Max.  
22.0  
16.0  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dB  
dB  
°C/W  
V
mA  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
1950MHz  
1950MHz  
1930MHz  
junction - lead  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
11.7  
25.5  
Input Return Loss  
Output Return Loss  
Noise Figure  
Thermal Resistance  
Device Operating Voltage  
Device Operating Current  
10.5  
7.5  
4.4  
145  
3.0  
52.0  
46.0  
58.0  
Test Conditions: V =3V, I =52mA Typ., OIP Tone Spacing=1MHz, P  
per tone=-5dBm, T =25°C, Z =Z =50Ω, Bias Tee Data  
L S L  
D
D
3
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS100813  
1 of 6  
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