Datasheet > SGC4563ZPCK2

SGC4563ZPCK2

更新时间： 2024-11-14 01:03:55

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
10页	535K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC4563ZPCK2 数据手册

SGC4563Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

Features

RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4563Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4563Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Single Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry

=15.6dBm at 1950MHz

1dB



OIP =28.5dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

Gain and RL versus Frequency

Optimum Technology

Matching® Applied

GaAs HBT

S21

Applications

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS



PA Driver Amplifier

Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C



Cellular, PCS, GSM, UMTS,

WCDMA

S22

S11

-10

-20

-30

-40

SiGe HBT



IF Amplifier



GaAs pHEMT

Si CMOS

Wireless Data, Satellite

Gain

IRL

ORL

Si BJT

GaN HEMT

RF MEMS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

Typ.

26.5

25.5

20.5

16.8

16.5

15.6

29.5

28.5

18.0

14.0

1.7

Max.

Small Signal Gain

dBm

Freq=500MHz

Freq=*850MHz

Freq=1950MHz

Freq=500MHz

Freq=850MHz

Freq=1950MHz

Freq=500MHz

Freq=850MHz

Freq=1950MHz

Freq=1930MHz

22.5

18.5

28.5

22.5

Output Power at 1dB Compression

Output Third Order Intercept Point

14.0

26.0

14.0

10.0

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

Thermal Resistance

3.0

120

°C/W

(R_TH, j-l) Junction to lead

Test Conditions: V_D=3.0V, I_D=48mA, T_L=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, Z_S=Z_L=50P_OUTper tone=0dBm, Application Circuit Data

Unless Otherwise Noted

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140527

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与SGC4563ZPCK2相关器件

型号	品牌	获取价格	描述	数据表
SGC4563ZSQ	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563ZSR	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
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SGC-4F05D1T	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
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SGC-4F12D0T	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
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