Datasheet > SGC4486ZSR

SGC4486ZSR

更新时间： 2024-09-26 01:03:55

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	282K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SGC4486ZSR 数据手册

SGC4486Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

SGC4486Z

Cascadable

Gain Block

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-86

Product Description

Features

RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC4486Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC4486Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50Ω.



Single Fixed 3V Supply



No Dropping Resistor

Required



Patented Self-Bias Circuitry

=12.7dBm at 1950MHz

1dB



OIP =27.5dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

Optimum Technology

Gain & Return Loss V_D= 3V, I_D= 52mA

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

S21

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS,

WCDMA

Bias Tee Data, Z

= ZL

= 50 Ohms, T

= 25C



IF Amplifier

S22

S11



-10

-20

-30

GaAs pHEMT

Si CMOS

Wireless Data, Satellite

Si BJT

GaN HEMT

RF MEMS

0.5

1.5

2.5

3.5

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

19.0

13.0

Typ.

20.5

14.5

12.3

13.8

12.7

12.4

29.0

27.5

26.5

14.5

11.5

3.4

Max.

22.0

16.0

Small Signal Gain

dBm

°C/W

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

1930MHz

junction - lead

Output Power at 1dB Compression

Output Third Order Intercept Point

11.7

25.5

Input Return Loss

Output Return Loss

Noise Figure

Thermal Resistance

Device Operating Voltage

Device Operating Current

10.5

7.5

4.4

145

3.0

52.0

46.0

58.0

Test Conditions: V =3V, I =52mA Typ., OIP Tone Spacing=1MHz, P

per tone=-5dBm, T =25°C, Z =Z =50Ω, Bias Tee Data

L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100813

1 of 6

12 3 4 5 6

中文翻译

下载PDF

与SGC4486ZSR相关器件

型号	品牌	获取价格	描述	数据表
SGC4563Z	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563ZPCK1	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563ZPCK2	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563ZSQ	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC4563ZSR	RFMD	获取价格	50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC-4F	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
SGC-4F05D0M	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
SGC-4F05D0T	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
SGC-4F05D1M	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC
SGC-4F05D1T	AZETTLER	获取价格	SOLID STATE RELAY 2 AMP 250 VAC

与SGC4486ZSR相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

6
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

8
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

16

产品中心

服务支持

精选活动

关于我们

帮助中心

SGC4486ZSR

SGC4486ZSR 数据手册

与SGC4486ZSR相关器件

与SGC4486ZSR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SGC4486ZSR

SGC4486ZSR 数据手册

与SGC4486ZSR相关器件

与SGC4486ZSR相关文章

您还可以找

您在本页遇到什么问题？