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SGC4563ZSR PDF预览

SGC4563ZSR

更新时间: 2024-01-27 17:53:16
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
10页 535K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGC4563ZSR 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:TSSOP6,.08Reach Compliance Code:compliant
ECCN代码:5A991.GHTS代码:8542.33.00.01
风险等级:5.67Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:18.5 dB最大输入功率 (CW):12 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:6最大工作频率:4000 MHz
最小工作频率:50 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP6,.08电源:3 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:54 mA表面贴装:YES
技术:BIPOLAR最大电压驻波比:10
Base Number Matches:1

SGC4563ZSR 数据手册

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SGC4563Z  
SGC4563Z  
50MHz to 4000MHz ACTIVE BIAS SILICON  
GERMANIUM CASCADABLE GAIN BLOCK  
Package: SOT-363  
Product Description  
Features  
RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-  
ing a Darlington configuration with a patented active bias network. The  
active bias network provides stable current over temperature and process  
Beta variations. Designed to run directly from a 3V supply, the SGC4563Z  
does not require a dropping resistor as compared to typical Darlington  
amplifiers. The SGC4563Z is designed for high linearity 3V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50.  
Single Fixed 3V Supply  
No Dropping Resistor  
Required  
Patented Self-Bias Circuitry  
P
=15.6dBm at 1950MHz  
1dB  
OIP =28.5dBm at 1950MHz  
3
Robust 1000V ESD, Class 1C  
HBM  
Gain and RL versus Frequency  
Optimum Technology  
Matching® Applied  
30  
20  
10  
0
GaAs HBT  
S21  
Applications  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
PA Driver Amplifier  
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C  
Cellular, PCS, GSM, UMTS,  
WCDMA  
S22  
S11  
-10  
-20  
-30  
-40  
SiGe HBT  
IF Amplifier  
GaAs pHEMT  
Si CMOS  
Wireless Data, Satellite  
Gain  
IRL  
ORL  
Si BJT  
GaN HEMT  
RF MEMS  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Frequency (GHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
26.5  
25.5  
20.5  
16.8  
16.5  
15.6  
29.5  
29.5  
28.5  
18.0  
14.0  
1.7  
Max.  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
Freq=500MHz  
Freq=*850MHz  
Freq=1950MHz  
Freq=500MHz  
Freq=850MHz  
Freq=1950MHz  
Freq=500MHz  
Freq=850MHz  
Freq=1950MHz  
Freq=1950MHz  
Freq=1950MHz  
Freq=1930MHz  
22.5  
18.5  
28.5  
22.5  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
14.0  
26.0  
14.0  
10.0  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
dB  
dB  
V
mA  
3.0  
59  
3
48  
120  
37  
°C/W  
(RTH, j-l) Junction to lead  
Test Conditions: VD=3.0V, ID=48mA, TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit Data  
Unless Otherwise Noted  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS140527  
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