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SGC4263ZSQ PDF预览

SGC4263ZSQ

更新时间: 2024-02-02 08:59:18
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
9页 653K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGC4263ZSQ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP6,.08Reach Compliance Code:compliant
ECCN代码:5A991.GHTS代码:8542.33.00.01
风险等级:5.67特性阻抗:50 Ω
构造:COMPONENT增益:12.6 dB
最大输入功率 (CW):12 dBm安装特点:SURFACE MOUNT
功能数量:1端子数量:6
最大工作频率:4000 MHz最小工作频率:50 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP6,.08
电源:3 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:63 mA
表面贴装:YES技术:BIPOLAR
最大电压驻波比:10Base Number Matches:1

SGC4263ZSQ 数据手册

 浏览型号SGC4263ZSQ的Datasheet PDF文件第2页浏览型号SGC4263ZSQ的Datasheet PDF文件第3页浏览型号SGC4263ZSQ的Datasheet PDF文件第4页浏览型号SGC4263ZSQ的Datasheet PDF文件第5页浏览型号SGC4263ZSQ的Datasheet PDF文件第6页浏览型号SGC4263ZSQ的Datasheet PDF文件第7页 
SGC4263Z  
SGC4263Z  
50MHz to 4000MHz ACTIVE BIAS SILICON  
GERMANIUM CASCADABLE GAIN BLOCK  
Package: SOT-363  
Product Description  
Features  
RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz-  
ing a Darlington configuration with a patented active bias network. The  
active bias network provides stable current over temperature and process  
Beta variations. Designed to run directly from a 3V supply, the SGC4263Z  
does not require a dropping resistor as compared to typical Darlington  
amplifiers. The SGC4263Z is designed for high linearity 3V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50.  
Single Fixed 3V Supply  
No Dropping Resistor  
Required  
Patented Self-Bias Circuitry  
P
=15.1dBm at 1950MHz  
1dB  
OIP =30dBm at 1950MHz  
3
Robust 1000V ESD, Class 1C  
HBM  
Gain, RL and NF versus Frequency  
Optimum Technology  
Matching® Applied  
30  
20  
10  
0
GaAs HBT  
Applications  
S21  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS,  
WCDMA  
Bias Tee Data, ZS = ZL = 50 Ohms, TL  
SiGe HBT  
IF Amplifier  
-10  
-20  
-30  
S22  
GaAs pHEMT  
Si CMOS  
Wireless Data, Satellite  
S11  
Gain  
IRL  
ORL  
Si BJT  
GaN HEMT  
RF MEMS  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Frequency (GHz)  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
15.0  
14.7  
14.0  
15.2  
Max.  
Small Signal Gain, (G)  
dB  
dB  
dB  
500MHz  
*850MHz  
1950MHz  
500MHz  
13.2  
12.6  
16.2  
15.4  
Output Power at 1dB Compression  
(P1dB  
dBm  
)
15.1  
15.1  
32.0  
dBm  
dBm  
dBm  
850MHz  
1950MHz  
500MHz  
13.6  
Output Third Order Intercept Point  
(OIP3)  
30.5  
30.0  
23.5  
21.0  
3.3  
dBm  
dBm  
dB  
dB  
dB  
850MHz  
27.0  
17.0  
17.0  
1950MHz  
1950MHz  
1950MHz  
1930MHz  
Input Return Loss, (IRL)  
Output Return Loss, (ORL)  
Noise Figure (NF)  
4.5  
64  
Device Operating Voltage, (VD)  
3.0  
V
Device Operating Current, (ID)  
44  
55  
mA  
Thermal Resistance  
130  
°C/W  
(Junction - Lead) (Rth, j-l)  
Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit  
Data Unless Otherwise Noted  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS140502  
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