Datasheet > SFR9130JS

SFR9130JS

更新时间： 2024-10-02 09:33:59

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	130K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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SFR9130JS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

SFR9130JS 数据手册

SFR9130J

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

RADIATION TOLERANT

20 AMP, 100 Volts, 90 mΩ

Avalanche Rated P-MOSFET

SFR9130 __ __ __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:



Rugged Trench Technology

Low ON-resistance: 60mΩ typ

Lead Options

__ = Straight Leads

DB = Down Bend

UB = Up Bend



Radiation tolerant: less than 0.5V typical gate

threshold shift @ TID= 100kRAD

SEU and SEGR resistant to LET 38

Avalanche rated

Hermetically Sealed Power Packaging

Low Total Gate Charge, Fast Switching

Replacement for IRF9130 types

TX, TXV, S-Level screening available



Package ^3/

J = TO-257

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain – Source Voltage

-100

Gate – Source Voltage, continuous

Gate – Source Voltage, transient

±15

±25

V_GS

@ T_C= 25ºC

@ T_C= 100ºC

Max. Continuous Drain Current

(package limited)

I_D1

I_D2

Max. Avalanche Current

@ L= 5.0mH

@ Tj= 150ºC

@ L= 5.0mH

@ T_C= 25ºC

I_AR

I_DM

Max. Continuous Drain Current (Tj limited)

Single Pulse Avalanche Energy

Total Power Dissipation

E_AS

300

P_D

Operating & Storage Temperature

-55 to +150

ºC

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.65

ºC/W

R_0JC

NOTES:

TO-257 (J)

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0013C

DOC

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SFR9130JTX	SSDI	获取价格	Power Field-Effect Transistor
SFR9130JTXV	SSDI	获取价格	Power Field-Effect Transistor
SFR9130JUB	SSDI	获取价格	Power Field-Effect Transistor
SFR9130JUBS	SSDI	获取价格	Power Field-Effect Transistor
SFR9130JUBTX	SSDI	获取价格	Power Field-Effect Transistor
SFR9130JUBTXV	SSDI	获取价格	Power Field-Effect Transistor
SFR9130S.5	SSDI	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SFR9130S.5S	SSDI	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SFR9130S.5TX	SSDI	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SFR9130S.5TXV	SSDI	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET