Datasheet > SFR9214TF-AM002

SFR9214TF-AM002

更新时间： 2024-10-01 15:50:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	309K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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SFR9214TF-AM002 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SFR9214TF-AM002 数据手册

SFR/U9214

Advanced Power MOSFET

FEATURES

BV_DSS= -250 V

R_DS(on)= 4.0 Ω

I_D= -1.53 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ V_DS= -250V

Lower R_DS(ON): 3.15 Ω (Typ.)

D-PAK

I-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

-250

-1.53

-0.97

-6.1

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

110

-1.53

1.9

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

-4.8

2.5

Total Power Dissipation (T_A=25 C)

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

P_D

W/^oC

0.15

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

Max.

Units

R_θJC

6.58

^oC/W

R_θJA

110

* When mounted on the minimum pad size recommended (PCB Mount).

Rev. B1

2001 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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