5秒后页面跳转
SFR9210 PDF预览

SFR9210

更新时间: 2024-09-30 21:53:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 258K
描述
Advanced Power MOSFET

SFR9210 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N雪崩能效等级(Eas):119 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):1.6 A
最大漏极电流 (ID):1.6 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):19 W
最大脉冲漏极电流 (IDM):6.4 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFR9210 数据手册

 浏览型号SFR9210的Datasheet PDF文件第2页浏览型号SFR9210的Datasheet PDF文件第3页浏览型号SFR9210的Datasheet PDF文件第4页浏览型号SFR9210的Datasheet PDF文件第5页浏览型号SFR9210的Datasheet PDF文件第6页浏览型号SFR9210的Datasheet PDF文件第7页 
SFR/U9210  
Advanced Power MOSFET  
FEATURES  
BVDSS = -200 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 3.0  
ID = -1.6 A  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : 10 mA (Max.) @ VDS = -200V  
Lower RDS(ON) : 2.084 W (Typ.)  
D-PAK  
I-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
-200  
Units  
VDSS  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
-1.6  
ID  
A
-1.08  
IDM  
VGS  
EAS  
IAR  
1
-6.4  
A
V
O
+
_
Gate-to-Source Voltage  
30  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
119  
-1.6  
1.9  
mJ  
A
O
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
W
O
Peak Diode Recovery dv/dt  
3
O
-5.0  
2.5  
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
19  
W
W/oC  
0.15  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, from case for 5-seconds  
TL  
1/8”  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
6.58  
50  
oC/W  
RqJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
RqJA  
110  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

与SFR9210相关器件

型号 品牌 获取价格 描述 数据表
SFR9210F FAIRCHILD

获取价格

Advanced Power MOSFET
SFR9210TF ROCHESTER

获取价格

1.6A, 200V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9210TM ROCHESTER

获取价格

1.6A, 200V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9210TM FAIRCHILD

获取价格

Power Field-Effect Transistor, 1.6A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
SFR9214 FAIRCHILD

获取价格

Advanced Power MOSFET
SFR9214TF ROCHESTER

获取价格

1.53A, 250V, 4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9214TF FAIRCHILD

获取价格

Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
SFR9214TF-AM002 FAIRCHILD

获取价格

Transistor
SFR9214TM ROCHESTER

获取价格

1.53A, 250V, 4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9214TM-NL FAIRCHILD

获取价格

Transistor