Datasheet > SFR9130S.5TXV

SFR9130S.5TXV

更新时间： 2024-10-01 15:50:59

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	123K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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SFR9130S.5TXV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
配置：	Single	最大漏极电流 (Abs) (ID)：	26 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	83 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SFR9130S.5TXV 数据手册

SFR9130S.5

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

RADIATION TOLERANT

26 AMP, 100 Volts, 90 m

Avalanche Rated P-MOSFET

SFR9130 S.5 __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Features:



Rugged Trench Technology

Low ON-resistance: 57mΩ typ

Package ^3/

Radiation tolerant: less than 0.5V typical gate

threshold shift @ TID= 100kRAD

SEU and SEGR resistant to LET 38

Avalanche rated

Hermetically Sealed Power Packaging

Low Total Gate Charge, Fast Switching

Replacement for IRF9130 types

TX, TXV, S-Level screening available

S.5 = SMD.5



Maximum Ratings

Symbol

V_DSS

Value

Units

Drain – Source Voltage

-100

Gate – Source Voltage, continuous

Gate – Source Voltage, transient

±15

±25

V_GS

@ T_C= 25ºC

@ T_C= 100ºC

Max. Continuous Drain Current

(package limited)

I_D1

I_D2

Max. Avalanche current

@ L= 5.0 mH

@ Tj= 150 ºC

@ L= 5.0 mH

@ T_C= 25ºC

I_AR

I_DM

Max. Continuous Drain Current (Tj limited)

Single Pulse Avalanche Energy

Total Power Dissipation

E_AS

300

P_D

Operating & Storage Temperature

-55 to +150

ºC

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.5 (typ 0.5)

ºC/W

R_0JC

NOTES:

SMD.5 (S.5)

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0045B

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与SFR9130S.5TXV相关器件

型号	品牌	获取价格	描述	数据表
SFR9210	FAIRCHILD	获取价格	Advanced Power MOSFET
SFR9210F	FAIRCHILD	获取价格	Advanced Power MOSFET
SFR9210TF	ROCHESTER	获取价格	1.6A, 200V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9210TM	ROCHESTER	获取价格	1.6A, 200V, 3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9210TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.6A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal
SFR9214	FAIRCHILD	获取价格	Advanced Power MOSFET
SFR9214TF	ROCHESTER	获取价格	1.53A, 250V, 4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9214TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.53A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
SFR9214TF-AM002	FAIRCHILD	获取价格	Transistor
SFR9214TM	ROCHESTER	获取价格	1.53A, 250V, 4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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