SFR9130J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
RADIATION TOLERANT
20 AMP, 100 Volts, 90 mΩ
Avalanche Rated P-MOSFET
SFR9130 __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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│
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│
│
│
│
│
└
│
│
│
│
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Features:
Rugged Trench Technology
Low ON-resistance: 60mΩ typ
Lead Options
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Radiation tolerant: less than 0.5V typical gate
threshold shift @ TID= 100kRAD
SEU and SEGR resistant to LET 38
Avalanche rated
Hermetically Sealed Power Packaging
Low Total Gate Charge, Fast Switching
Replacement for IRF9130 types
TX, TXV, S-Level screening available
Package 3/
J = TO-257
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain – Source Voltage
-100
Gate – Source Voltage, continuous
Gate – Source Voltage, transient
±15
±25
VGS
V
A
@ TC = 25ºC
@ TC = 100ºC
Max. Continuous Drain Current
(package limited)
ID1
ID2
20
15
Max. Avalanche Current
@ L= 5.0mH
@ Tj= 150ºC
@ L= 5.0mH
@ TC = 25ºC
IAR
IDM
26
26
A
A
Max. Continuous Drain Current (Tj limited)
Single Pulse Avalanche Energy
Total Power Dissipation
EAS
300
mJ
W
75
PD
Operating & Storage Temperature
-55 to +150
ºC
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.65
ºC/W
R0JC
NOTES:
TO-257 (J)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC