Datasheet > SFR9110TM

SFR9110TM

更新时间： 2024-10-01 21:01:43

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		/
页数	文件大小	规格书
7页	253K
描述
Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

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技术参数
数据手册

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SFR9110TM 技术参数

生命周期：	Contact Manufacturer	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.69	Base Number Matches：	1

SFR9110TM 数据手册

SFR/U9110

Advanced Power MOSFET

FEATURES

BV_DSS= -100 V

R_DS(on)= 1.2 Ω

I_D= -2.8 A

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 10 µA (Max.) @ V_DS= -100V

n Lower R_DS(ON): 0.912 Ω (Typ.)

D-PAK

I-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

-100

-2.8

-2.0

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^oC)

Continuous Drain Current (T_C=100^oC)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±30

Single Pulsed Avalanche Energy

Avalanche Current

-2.8

2.0

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

-6.5

2.5

Total Power Dissipation (T_A=25 C)

Total Power Dissipation (T_C=25^oC)

Linear Derating Factor

P_D

W/^oC

0.16

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_θJC

Junction-to-Case

Junction-to-Ambient

6.25

^oC/W

R_θJA

110

* When mounted on the minimum pad size recommended (PCB Mount).

Rev. C

12 3 4 5 6 7

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与SFR9110TM相关器件

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