5秒后页面跳转
SFR9110TF PDF预览

SFR9110TF

更新时间: 2024-10-01 19:59:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
7页 248K
描述
Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

SFR9110TF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.28
雪崩能效等级(Eas):31 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):2.8 A最大漏极电流 (ID):2.8 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):11 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFR9110TF 数据手册

 浏览型号SFR9110TF的Datasheet PDF文件第2页浏览型号SFR9110TF的Datasheet PDF文件第3页浏览型号SFR9110TF的Datasheet PDF文件第4页浏览型号SFR9110TF的Datasheet PDF文件第5页浏览型号SFR9110TF的Datasheet PDF文件第6页浏览型号SFR9110TF的Datasheet PDF文件第7页 
SFR/U9110  
Advanced Power MOSFET  
FEATURES  
BVDSS = -100 V  
RDS(on) = 1.2   
ID = -2.8 A  
n Avalanche Rugged Technology  
n Rugged Gate Oxide Technology  
n Lower Input Capacitance  
n Improved Gate Charge  
n Extended Safe Operating Area  
n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V  
n Lower RDS(ON) : 0.912 (Typ.)  
D-PAK  
I-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-100  
-2.8  
-2.0  
11  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
ID  
A
1
IDM  
VGS  
EAS  
IAR  
A
V
O
Gate-to-Source Voltage  
±30  
52  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
O
1
-2.8  
2.0  
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
-6.5  
2.5  
O
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
20  
W
W/oC  
0.16  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
RθJC  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
--  
--  
--  
6.25  
50  
oC/W  
RθJA  
RθJA  
*
110  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. C  

SFR9110TF 替代型号

型号 品牌 替代类型 描述 数据表
FQD5P10TM FAIRCHILD

类似代替

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Me

与SFR9110TF相关器件

型号 品牌 获取价格 描述 数据表
SFR9110TM ROCHESTER

获取价格

Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met
SFR9120 FAIRCHILD

获取价格

Advanced Power MOSFET
SFR9120TF ROCHESTER

获取价格

4.9A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9120TF FAIRCHILD

获取价格

Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
SFR9120TM ROCHESTER

获取价格

4.9A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
SFR9120TM FAIRCHILD

获取价格

Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
SFR9120TM_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
SFR9130 FAIRCHILD

获取价格

Advanced Power MOSFET
SFR9130J SSDI

获取价格

Power Field-Effect Transistor
SFR9130JDB SSDI

获取价格

Power Field-Effect Transistor