Datasheet > SFH054

SFH054

更新时间： 2024-09-14 03:32:35

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
7页	951K
描述
N-Channel MOSFET

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SFH054 数据手册

PRELIMINARY

SemiWell Semiconductor

SFH054

N-Channel MOSFET

Features

2. Drain

Symbol

{

■ Low R (on) (0.014Ω )@V =10V

●

■ Low Gate Charge (Typical 70nC)

■ Low Crss (Typical 160pF)

◀

▲

●

1. Gate

{

■ Improved dv/dt Capability

■ 100% Avalanche Tested

{

3. Source

■ Maximum Junction Temperature Range (175°C)

General Description

TO-247

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for synchronous DC-DC Converters and Power Management in

portable and battery operated products.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

V_DSS

Drain to Source Voltage

Continuous Drain Current(@T_C= 25°C)

Continuous Drain Current(@T_C= 100°C)

70*

I_D

I_DM

V_GS

E_AS

dv/dt

Drain Current Pulsed

(Note 1)

360

±25

800

7.0

Gate to Source Voltage

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation(@T_C= 25 °C)

(Note 2)

(Note 3)

V/ns

230

1.5

P_D

Derating Factor above 25 °C

W/°C

°C

T_STG,T_J

T_L

Operating Junction Temperature & Storage Temperature

- 55 ~ 175

300

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

°C

Thermal Characteristics

Value

Symbol

Parameter

Units

Min.

Typ.

Max.

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case to Sink

0.24

0.65

°C/W

Thermal Resistance, Junction-to-Ambient

1/7

March, 2004. Rev. 0.

12 3 4 5 6 7

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