SFF10N100M
SFF10N100Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
10 Amps , 1000 Volts, 1.2 Ω
N-channel Power MOSFET
SFF10N100 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Low RDS(on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ 4/
M = TO-254
Available in ceramic seals for improved
Hermeticity
Z = TO-254Z
Hermetically sealed power package.
TX, TXV, S-Level screening available
Replaces: IXTH10N100 types
Maximum Ratings
Symbol
VDS
Value
1000
±20
Units
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
V
V
A
VGS
ID
10
TC= 25°C
TC= 55°C
150
144
Total Power Dissipation
PD
TOP & TSTG
RθJC
W
°C
Operating & Storage Temperature
-55 to +150
Maximum Thermal Resistance
Junction to Case
0.83
°C/W
NOTES:
TO-254
TO-254Z
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available
on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @ 25°C.
6/ Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00177E
DOC