Datasheet > SDR60U100DPS

SDR60U100DPS

更新时间： 2024-11-10 07:39:35

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	91K
描述
Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3

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SDR60U100DPS 数据手册

SDR60U080CT

thru

SDR60U120CT

Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

60 AMP

ULTRA FAST LOW VF

CENTERTAP RECTIFIER

800 -1200 Volts

SDR60

___ ___ ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

│

└

│

└

55 nsec

Package Type

N = TO-258

P = TO-259

Features:

 Ultra Fast Recovery: 40 nsec typical

 High Surge Rating

 Low Reverse Leakage Current

 Low Forward Voltage Drop

Configuration

CT = Common Cathode

CA = Common Anode

D = Doubler

 Low Junction Capacitance

DR = Doubler Reverse

 Hermetically Sealed Package

 Gold Eutectic Die Attach available

 Ultrasonic Aluminum Wire Bonds

 Ceramic Seals for improved hermeticity available

 Available in Centertap and Doubler versions

 TX, TXV, Space Level Screening Available Consult

Factory.

Voltage/Family

080 = 800V

090 = 900V

100 = 1000V

110 = 1100V

120 = 1200V

Recovery Time

U = Ultra Fast

Maximum Ratings

Symbol

V_RRM

V_RWM

V_R

Value

Units

Volts

Peak Repetitive Reverse and

DC Blocking Voltage

SDR60U080

SDR60U090

SDR60U100

SDR60U110

SDR60U120

800

900

1000

1100

1200

Average Rectified Forward Current

Amps

(Resistive Load, 60 Hz Sine Wave, T_A= 25ºC)^3/4/

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to

I_FSM

Top & Tstg

R_θJE

400

Amps

ºC

Reach Equilibrium Between Pulses, T_A= 25ºC)^3/

Operating & Storage Temperature

-65 to +200

Maximum Thermal Resistance

Junction to Case, each individual diode

Junction to Case^3/

1.0

0.75

ºC/W

TO-258 (N)

TO-259 (P)

1/ For ordering information, price, operating curves, and availability - Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Both legs tied together.

4/ Package limited.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0145B

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与SDR60U100DPS相关器件

型号	品牌	获取价格	描述	数据表
SDR60U100DPTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U100DRN	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U100DRNS	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U100DRP	SSDI	获取价格	60 A, 1000 V Low VF Ultrafast Recovery Centertap Rectifier
SDR60U100DRPS	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U100DRPTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U100N	SSDI	获取价格	60 A, 1000 V Low VF Ultrafast Recovery Rectifier
SDR60U100NS	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U100NTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U100P	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P

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