Datasheet > SDR60U100NTXV

SDR60U100NTXV

更新时间： 2024-11-06 09:08:31

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	86K
描述
Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SDR60U100NTXV 数据手册

SDR60U080N thru SDR60U120N

and

SDR60U080P thru SDR60U120P

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

60 AMP

Low VF

Part Number / Ordering Information ^1/

Ultra Fast Recovery

Rectifier

__ __ __ __

SDR60

Screening ^2/

│

└

│

└

│

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

800 -1200 Volts

50 nsec

Package Type

N = TO-258

P = TO-259

Features:

• Ultra Fast Recovery: 45 nsec typical

• High Surge Rating

Voltage/Family

080 = 800V

090 = 900V

100 = 1000V

110 = 1100V

120 = 1200V

• Low Reverse Leakage Current

• Low Forward Voltage Drop

• Low Junction Capacitance

• Hermetically Sealed Package

• Gold Eutectic Die Attach available

• Ultrasonic Aluminum Wire Bonds

• Ceramic Seals for improved hermeticity available

• TX, TXV, Space Level Screening Available Consult

Factory.^2/

Recovery Time

U = Ultra Fast

Maximum Ratings

Symbol

V_RRM

Value

Units

Volts

Peak Repetitive Reverse and

DC Blocking Voltage

SDR60U080

SDR60U090

SDR60U100

SDR60U110

SDR60U120

800

900

1000

1100

1200

V_RWM

V_R

Average Rectified Forward Current

Amps

(Resistive Load, 60 Hz Sine Wave, T_A= 25ºC)^3/4/

Peak Surge Current

I_FSM

(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium

500

Between Pulses, T_A= 25ºC) ^3/4/

Operating & Storage Temperature

Top & Tstg

R_θJE

ºC

-65 to +200

0.75

Maximum Thermal Resistance

ºC/W

Junction to End Tab^3/

TO-258 (N)

TO-259 (P)

1/ For ordering information, price, operating curves, and availability - Contact

factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Pins 2 & 3 connected.

4/ Limited by wirebonding

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0144A

DOC

中文翻译

下载PDF

与SDR60U100NTXV相关器件

型号	品牌	获取价格	描述	数据表
SDR60U100P	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U100PTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U100PTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 60A, 1000V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U110	SSDI	获取价格	Low VF Ultra Fast Recovery Rectifier
SDR60U110CAN	SSDI	获取价格	60 A, 1100 V Low VF Ultrafast Recovery Centertap Rectifier
SDR60U110CANTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1100V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U110CAP	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1100V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U110CTN	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1100V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U110CTNTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1100V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U110CTNTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1100V V(RRM), Silicon, TO-258AA, HERMETIC SEALED

与SDR60U100NTXV相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SDR60U100NTXV

SDR60U100NTXV 数据手册

与SDR60U100NTXV相关器件

与SDR60U100NTXV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SDR60U100NTXV

SDR60U100NTXV 数据手册

与SDR60U100NTXV相关器件

与SDR60U100NTXV相关文章

您还可以找

您在本页遇到什么问题？