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SDR60U090CAP PDF预览

SDR60U090CAP

更新时间: 2024-09-10 13:13:19
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 87K
描述
Rectifier Diode, 1 Phase, 2 Element, 60A, 900V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3

SDR60U090CAP 技术参数

生命周期:Active零件包装代码:TO-259
包装说明:R-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.25
Is Samacsys:N应用:ULTRA FAST RECOVERY
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-259
JESD-30 代码:R-XSFM-P3最大非重复峰值正向电流:400 A
元件数量:2相数:1
端子数量:3最大输出电流:60 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:900 V最大反向恢复时间:0.055 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR60U090CAP 数据手册

 浏览型号SDR60U090CAP的Datasheet PDF文件第2页 
SDR60U080N thru SDR60U120N  
and  
SDR60U080P thru SDR60U120P  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
60 AMP  
Low VF  
Part Number / Ordering Information 1/  
Ultra Fast Recovery  
Rectifier  
__ __ __ __  
SDR60  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
800 -1200 Volts  
50 nsec  
Package Type  
N = TO-258  
P = TO-259  
Features:  
Ultra Fast Recovery: 45 nsec typical  
High Surge Rating  
Voltage/Family  
080 = 800V  
090 = 900V  
100 = 1000V  
110 = 1100V  
120 = 1200V  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach available  
Ultrasonic Aluminum Wire Bonds  
Ceramic Seals for improved hermeticity available  
TX, TXV, Space Level Screening Available Consult  
Factory.2/  
Recovery Time  
U = Ultra Fast  
Maximum Ratings  
Symbol  
VRRM  
Value  
Units  
Volts  
Peak Repetitive Reverse and  
DC Blocking Voltage  
SDR60U080  
SDR60U090  
SDR60U100  
SDR60U110  
SDR60U120  
800  
900  
1000  
1100  
1200  
VRWM  
VR  
Average Rectified Forward Current  
Io  
Amps  
Amps  
60  
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/  
Peak Surge Current  
IFSM  
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium  
500  
Between Pulses, TA = 25ºC) 3/4/  
Operating & Storage Temperature  
Top & Tstg  
RθJE  
ºC  
-65 to +200  
0.75  
Maximum Thermal Resistance  
ºC/W  
Junction to End Tab3/  
TO-258 (N)  
TO-259 (P)  
1/ For ordering information, price, operating curves, and availability - Contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Pins 2 & 3 connected.  
4/ Limited by wirebonding  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0144A  
DOC  

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