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SDM10P45-7 PDF预览

SDM10P45-7

更新时间: 2024-11-08 22:08:03
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
2页 63K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

SDM10P45-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.81
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.45 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:1 A元件数量:1
端子数量:3最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235最大功率耗散:0.12 W
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SDM10P45-7 数据手册

 浏览型号SDM10P45-7的Datasheet PDF文件第2页 
SDM10P45  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Ultra-Small Surface Mount Package  
Low Forward Voltage Drop  
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
SOT-523  
TOP VIEW  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
¾
¾
0.50  
Mechanical Data  
G
H
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
·
·
·
Case: SOT-523, Molded Plastic  
Case Material UL Flammability Rating: 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
J
M
N
K
L
L
D
·
·
·
·
Polarity: See Diagram  
M
N
a
Marking: LG (See Page 2)  
Weight: 0.002 grams (approx.)  
Ordering Information, See Page 2  
0°  
8°  
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
45  
VR(RMS)  
IFM  
RMS Reverse Voltage  
40  
100  
V
mA  
A
Forward Continuous Current (Note 1)  
Forward Surge Current  
IFSM  
@ t < 8.3ms  
1.0  
Pd  
Power Dissipation (Note 1)  
120  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
833  
Tj , TSTG  
-40 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 100mA  
45  
¾
¾
¾
IF = 10mA  
IF = 50mA  
¾
¾
370  
470  
450  
600  
VF  
Forward Voltage (Note 2)  
mV  
VR = 10V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
0.07  
6.0  
1.0  
mA  
VR = 10V, f = 1.0MHz  
CT  
¾
pF  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse to minimize self-heating effect.  
DS30287 Rev. 4 - 2  
1 of 2  
SDM10P45  
www.diodes.com  

SDM10P45-7 替代型号

型号 品牌 替代类型 描述 数据表
SDM10P45-7-F DIODES

完全替代

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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