SD860S-T3

更新时间： 2024-11-17 22:43:23

品牌	Logo	应用领域
WTE		整流二极管
页数	文件大小	规格书
3页	45K
描述
8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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中文翻译

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SD860S-T3 数据手册

WTE

POWER SEMICONDUCTORS

SD820S – SD8100S

8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L

D PAK/TO-252AA

Mechanical Data

Dim

Min

6.4

5.0

2.35

—

Max

Case: Molded Plastic

6.8

5.4

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

Polarity: Cathode Band

2.75

1.60

5.7

PIN 3 -

+ Case PIN 2

5.3

2.3

0.4

0.3

Weight: 0.4 grams (approx.)

Mounting Position: Any

Single

2.7

0.8

Marking: Type Number

0.6

Standard Packaging: 16mm Tape (EIA-481)

0.7

0.50 Typical

—

2.3

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

820S

830S

840S

850S

860S

Characteristic

Symbol

Unit

880S 8100S

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_L= 85°C

8.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

Forward Voltage (Note 1)

@I_F= 8.0A

V^FM

I^RM

0.65

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.2

Typical Junction Capacitance (Note 2)

C^j

R^ꢀ^JA

T^j

400

K/W

°C

Typical Thermal Resistance Junction to Ambient

Operating Temperature Range

-50 to +125

-50 to +150

Storage Temperature Range

T^STG

°C

Note: 1. Mounted on P.C. Board with 14mm²(0.13mm thick) copper pad.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SD820S – SD8100S

1 of 3

12 3

中文翻译

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与SD860S-T3相关器件

型号	品牌	获取价格	描述	数据表
SD860T	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 8.0 Amperes)
SD860-T	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, DO-201AD, ROHS COM
SD860-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, DO-201AD, ROHS COM
SD860-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, DO-201AD,
SD860YS	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SD860YS-T3	WTE	获取价格	8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SD860YT	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere)
SD862-04	FUJI	获取价格	SCHOTTKY BARRIER DIODE
SD863-04	FUJI	获取价格	SCHOTTKY BARRIER DIODE
SD863-06	FUJI	获取价格	SCHOTTKY BARRIER DIODE

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