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SD860-TP PDF预览

SD860-TP

更新时间: 2024-11-18 13:13:19
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
3页 364K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

SD860-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.32
Is Samacsys:N其他特性:LOW NOISE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:175 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SD860-TP 数据手册

 浏览型号SD860-TP的Datasheet PDF文件第2页浏览型号SD860-TP的Datasheet PDF文件第3页 
M C C  
SD820  
THRU  
SD8100  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Low Switching Noise and Low Forward Voltage Drop  
8 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
·
High Current Capability and High Surge Current Capability  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Ambient  
Maximum  
Recurrent Peak  
Part Number Reverse Voltage RMS Voltage  
Maximum DC  
Blocking  
Voltage  
MCC  
Maximum  
D
SD820  
SD830  
SD840  
SD850  
SD860  
SD880  
SD8100  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Average Forward  
Current  
IF(AV)  
8.0A  
T = 90°C  
A
Peak Forward Surge  
Current  
IFSM  
175A  
8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
SD820-SD860  
SD880-SD8100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MM  
MIN  
DIM  
A
MIN  
.287  
MAX  
MAX  
9.50  
5.30  
1.30  
---  
NOTE  
VF  
IR  
.62V  
.85V  
IFM = 8.0A;  
T = 25°C(Note 2)  
A
.374  
7.30  
4.80  
1.20  
B
C
D
.189  
.048  
.208  
.052  
---  
1.000  
25.40  
0.5mA  
50mA  
T = 25°C  
A
T = 100°C  
A
Typical Junction  
Capacitance  
CJ  
550pF  
Measured at  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
2.Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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