Datasheet > SD2932_04

SD2932_04

更新时间： 2024-01-01 13:16:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频
页数	文件大小	规格书
12页	556K
描述
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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SD2932_04 数据手册

SD2932

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

• GOLD METALLIZATION

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION,

PUSH PULL

• P_OUT= 300 W MIN. WITH 15 dB GAIN @

175 MHz

M244

epoxy sealed

DESCRIPTION

The SD2932 is a gold metallized N-Channel MOS

field-effect RF power transistor. The SD2932 it is

intended for use in 50 V dc large signal

applications up 250 MHz.

PIN CONNECTION

1. Drain

2. Gate

3. Source

ORDER CODES

Order Codes

Marking

Package

Packaging

SD2932

M244

Plastic Tray

ABSOLUTE MAXIMUM RATINGS (T_CASE= 25 ^°C)

Symbol

Parameter

Value

125

±20

Unit

Drain Source Voltage

(BR)DSS

Drain-Gate Voltage (R = 1MΩ)

DGR

Gate-Source Volatge

Drain Current

Power Dissipation

500

+200

°C

DISS

Max. Operating Junction Temperature

Storage Temperature

-65 to +150

STG

THERMAL DATA

th(j-c)

Junction -Case Thermal Resistance

0.35

°C/W

REV. 5

July 2004

1/12

12 3 4 5 6 7...12

中文翻译

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