Datasheet > SD2932_10

SD2932_10

更新时间： 2024-02-03 21:50:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频
页数	文件大小	规格书
22页	704K
描述
RF power transistors HF/VHF/UHF N-channel MOSFETs

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SD2932_10 数据手册

SD2932

RF power transistors

HF/VHF/UHF N-channel MOSFETs

Features

■ Gold metallization

■ Excellent thermal stability

■ Common source configuration, push-pull

■ P

= 300 W min. with 15 dB gain @ 175 MHz

OUT

Description

The SD2932 is a gold metallized N-channel MOS

field-effect RF power transistor. The device is

intended for use in 50 V DC large signal

applications up to 250 MHz.

M244

Epoxy sealed

Figure 1.

Pin connection

3. Source

1. Drain

2. Gate

Table 1.

Order code

SD2932

Device summary

Marking

Package

M244

Packaging

Tube

SD2932

March 2010

Doc ID 6876 Rev 8

1/22

www.st.com

12 3 4 5 6 7...22

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型号	品牌	获取价格	描述	数据表
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SD2941-10	ETC	获取价格	HF to 2000 MHz Class AB Common Source - PowerSO-10RF
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