Datasheet > SD2941-10

SD2941-10

更新时间： 2023-12-20 18:46:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体管
页数	文件大小	规格书
17页	542K
描述
175W - 50V HF/VHF DMOS晶体管

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SD2941-10 数据手册

SD2941-10

HF/VHF/UHF RF power N-channel MOSFETs

Datasheet - production data

Features

• Gold metallization

• Excellent thermal stability

• Common source configuration

• P

= 175 W min. with 15 dB gain @ 175

MHz, 50 V

OUT

• P

= 135 W typ. with 14 dB gain @ 123 MHz,

OUT

28 V

M174 Epoxy sealed

• Low R

DS(on)

• Thermally enhanced packaging for lower

junction temperatures

• In compliance with the 2002/95/EC1 European

Figure 1. Pin connection

directive

Description

1. Drain

The SD2941-10 is a gold metalized N-channel

MOS field-effect RF power transistor, intended for

use in 28 V to 50 V dc large signal applications up

2. Source

3. Gate

to 230 MHz. It offers 25% lower R

industry standard, with 20% higher P

than the

than

DS(on)

4. Source

SAT

ST's SD2931-10 device. The SD2941-10 is

housed in the low thermal M174 non-pedestal

package, offering 25% lower thermal resistance

than the industry standard, thus rendering it the

"best-in-class" transistor for ISM applications,

where reliability and ruggedness are critical

factor.

Table 1. Device summary

Base qty.

Order code

Marking

SD2941-10⁽¹⁾

Package

Packaging⁽¹⁾

SD2941-10W

25 pcs

M174

Plastic tray

1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.

August 2015

DocID11815 Rev 6

1/17

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...17

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