是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.8 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.05 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SD214DE-2 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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|
SD214DE-TO-72-4L | Linear | Transistor, |
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|
SD215 | CALOGIC | High-Speed Analo N-Channel DMOS FETs |
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|
SD215 | Linear Systems | HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS |
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|
SD215DE | Linear Systems | N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED |
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|
SD215DE | CALOGIC | High-Speed Analo N-Channel DMOS FETs |
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