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SD1726_03 PDF预览

SD1726_03

更新时间: 2024-11-26 09:31:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波
页数 文件大小 规格书
8页 195K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

SD1726_03 数据手册

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SD1726 (THA15)  
RF & MICROWAVE TRANSISTORS  
HF SSB APPLICATIONS  
FEATURES  
OPTIMIZED FOR SSB  
30 MHz  
50 V  
IMD-30 dB  
COMMON EMITTER  
GOLD METALLIZATION  
M174  
epoxy sealed  
P  
= 150 W PEP MIN. WITH 14 dB GAIN  
OUT  
ORDER CODE  
BRANDING  
SD1726  
THA15  
DESCRIPTION  
The SD1726 is a 50 V epitaxial silicon NPN  
planar transistor  
PIN CONNECTION  
4
1
designed  
primarily  
for  
SSB communications. This device utilizes  
emitter ballasting to achieve extreme ruggedness  
under severe operating conditions.  
3
2
1. Drain  
2. Source  
3. Gate  
4. Source  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
110  
Unit  
V
V
CBO  
Collecto-Base Voltage  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Drain Current  
55  
V
CEO  
V
4.0  
V
EBO  
I
C
20  
A
P
Power Dissipation  
318  
W
°C  
°C  
DISS  
T
j
Max. Operating Junction Temperature  
Storage Temperature  
+200  
-65 to +150  
T
STG  
THERMAL DATA  
°
R
th(j-c)  
0.75  
°C/W  
Junction -Case Thermal Resistance at T  
= 70 C  
CASE  
January, 10 2003  
1/8  

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