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SD1730 PDF预览

SD1730

更新时间: 2024-11-25 22:50:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波
页数 文件大小 规格书
6页 79K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

SD1730 技术参数

生命周期:Obsolete包装说明:0.500 INCH, PLASTIC, M174, FM-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
最大集电极电流 (IC):16 A集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):15
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-PRFM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):320 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管元件材料:SILICON
Base Number Matches:1

SD1730 数据手册

 浏览型号SD1730的Datasheet PDF文件第2页浏览型号SD1730的Datasheet PDF文件第3页浏览型号SD1730的Datasheet PDF文件第4页浏览型号SD1730的Datasheet PDF文件第5页浏览型号SD1730的Datasheet PDF文件第6页 
SD1730 (TH560)  
RF & MICROWAVE TRANSISTORS  
HF SSB APPLICATIONS  
.
.
.
.
.
.
.
.
OPTIMIZED FOR SSB  
30 MHz  
28 VOLTS  
IMD 30dB  
EFFICIENCY 40%  
COMMON EMITTER  
GOLD METALLIZATION  
.500 4 LFL (M174)  
POUT 220 W PEP WITH 12 dB GAIN  
=
epoxy sealed  
ORDER CODE  
BRANDING  
TH560  
SD1730  
PIN CONNECTION  
DESCRIPTION  
The SD1730 is a 28 V epitaxial silicon NPN planar  
transistor designed primarily for SSB and VHF  
communications. The devices utlizes emitter bal-  
lasting for improved ruggedness and reliability.  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
70  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
35  
V
4.0  
V
16  
A
PDISS  
TJ  
Power Dissipation  
320  
+200  
W
°
°
Junction Temperature  
Storage Temperature  
C
C
TSTG  
65 to +150  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
0.6  
°C/W  
1/6  
September 7, 1994  

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