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SD175SA30A PDF预览

SD175SA30A

更新时间: 2024-11-16 04:05:19
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描述
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop

SD175SA30A 数据手册

 浏览型号SD175SA30A的Datasheet PDF文件第2页浏览型号SD175SA30A的Datasheet PDF文件第3页 
SENSITRON  
SD175SA30A/B/C  
SEMICONDUCTOR  
Technical Data  
Data Sheet 505, Rev.-  
SILICON SCHOTTKY RECTIFIER DIE  
Very Low Forward Voltage Drop  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Soft Reverse Recovery at Low and High Temperature  
Very Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Electrically / Mechanically Stable during and after Packaging  
Maximum Ratings(1):  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
Max.  
30  
30  
Units  
V
A
Peak Inverse Voltage  
Max. Average Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche  
Energy  
50% duty cycle, rectangular  
wave form  
IFSM  
EAS  
IAR  
8.3 ms, half Sine wave (1)  
570  
45  
A
mJ  
A
TJ = 25 °C, IAS = 10 A,  
L = 0.90 mH  
IAS decay linearly to 0 in 1 µs  
Repetitive Avalanche Current  
10  
ƒ limited by TJ max VA=1.5VR  
Max. Junction Temperature  
Max. Storage Temperature  
TJ  
Tstg  
-
-
-65 to +150  
-65 to +150  
°C  
°C  
Electrical Characteristics(1):  
Characteristics  
Symbol  
VF1  
Condition  
@ 30A, Pulse, TJ = 25 °C  
@ 30A, Pulse, TJ = 125 °C  
@VR = 30V, Pulse,  
TJ = 25 °C  
Max.  
0.49  
0.39  
4.0  
Units  
V
V
Max. Forward Voltage Drop  
VF2  
IR1  
Max. Reverse Current  
mA  
IR2  
CT  
@VR = 30V, Pulse,  
TJ = 125 °C  
@VR = 5V, TC = 25 °C  
fSIG = 1MHz,  
200  
mA  
pF  
Max. Junction Capacitance  
(1) in SHD package  
2200  
VSIG = 50mV (p-p)  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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