SD175SC200B

更新时间： 2024-09-28 04:05:19

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Ultra Fast Trr < 24 nsec SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop

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SD175SC200B 数据手册

SENSITRON

SD175SC200A/B/C

SEMICONDUCTOR

Technical Data

Data Sheet 4937, Rev.-

Ultra Fast T_rr< 24 nsec

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

Applications:

· Switching Power Supply · Converters · Free-Wheeling Diodes · Polarity Protection Diode

Features:

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Reverse Leakage Current

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

Units

Peak Inverse Voltage

Max. Average Forward Current

50% duty cycle, rectangular

wave form

8.3 ms, half Sine wave

(1)

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

I_FSM

E_AS

I_AR

570

T_J= 25 °C, I_AS= 0.75 A,

L = 40mH

Repetitive Avalanche Current

I_ASdecay linearly to 0 in 1 ms

0.75

¦ limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics⁽¹⁾:

Characteristics

Symbol

V_F1

Condition

@ 30A, Pulse, T_J= 25 °C

@ 30A, Pulse, T_J= 125 °C

@V_R= 200V, Pulse,

T_J= 25 °C

Max.

0.92

0.76

700

Units

Max. Forward Voltage Drop

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 °C

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

Max. Junction Capacitance

600

V_SIG= 50mV (p-p)

I_F= 0.5 A, I_R= 1.0 A,

I_RM= 0.25 A, T_J= 25 °C

Max. Reverse Recovery Time

t_rr

nsec

(1) in SHD package

· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·

· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·

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