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SD175SC100C PDF预览

SD175SC100C

更新时间: 2024-11-16 04:05:19
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SENSITRON /
页数 文件大小 规格书
4页 54K
描述
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200∑C Operating Temperature

SD175SC100C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIE
包装说明:DIE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.79
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-XXUC-N2湿度敏感等级:1
最大非重复峰值正向电流:570 A元件数量:1
相数:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SD175SC100C 数据手册

 浏览型号SD175SC100C的Datasheet PDF文件第2页浏览型号SD175SC100C的Datasheet PDF文件第3页浏览型号SD175SC100C的Datasheet PDF文件第4页 
SD175SC100A/B/C  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 521, REV. A  
SILICON SCHOTTKY RECTIFIER DIE  
Very Low Forward Voltage Drop  
200°C Operating Temperature  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Soft Reverse Recovery at Low and High Temperature  
Very Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
Electrically / Mechanically Stable during and after Packaging  
Out Performs 100 Volt Ultrafast Rectifiers  
Maximum Ratings:  
Characteristics  
Symbol  
VRWM  
IF(AV)  
Condition  
-
Max.  
100  
30  
Units  
V
A
Peak Inverse Voltage  
Max. Average Forward  
Current  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Non-Repetitive Avalanche  
Energy  
50% duty cycle, rectangular  
wave form  
IFSM  
EAS  
IAR  
8.3 ms, half Sine wave (1)  
570  
11.25  
0.75  
A
mJ  
A
TJ = 25 °C, IAS = 0.75 A,  
L = 40 mH  
AS decay linearly to 0 in 1 µs  
Repetitive Avalanche Current  
I
ƒ limited by TJ max VA=1.5VR  
Max. Junction Temperature  
Max. Storage Temperature  
TJ  
Tstg  
-
-
-65 to +200  
-65 to +200  
°C  
°C  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
Symbol  
VF1  
Condition  
@ 30A, Pulse, TJ = 25 °C  
@ 30A, Pulse, TJ = 125 °C  
@VR = 100V, Pulse,  
TJ = 25 °C  
@VR = 100V, Pulse,  
TJ = 125 °C  
@VR = 5V, TC = 25 °C  
fSIG = 1MHz,  
SIG = 50mV (p-p)  
Max.  
0.84  
0.68  
750  
Units  
V
V
VF2  
IR1  
Max. Reverse Current  
µA  
mA  
pF  
IR2  
CT  
15  
Max. Junction Capacitance  
(1) in SHD package  
1000  
V
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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