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SD1729 PDF预览

SD1729

更新时间: 2024-11-25 22:50:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频微波
页数 文件大小 规格书
4页 52K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

SD1729 数据手册

 浏览型号SD1729的Datasheet PDF文件第2页浏览型号SD1729的Datasheet PDF文件第3页浏览型号SD1729的Datasheet PDF文件第4页 
SD1729 (TH416)  
RF & MICROWAVE TRANSISTORS  
HF SSB APPLICATIONS  
.
.
.
.
.
.
.
OPTIMIZED FOR SSB  
30 MHz  
28 VOLTS  
IMD 30 dB  
COMMON EMITTER  
GOLD METALLIZATION  
POUT 130 W PEP WITH 12 dB GAIN  
=
.500 4LFL (M174)  
epoxy sealed  
ORDER CODE  
SD1729  
BRANDING  
TH416  
PIN CONNECTION  
DESCRIPTION  
The SD1729 is a Class AB 28 V epitaxial silicon  
NPN planar transistor designed primarily for SSB  
communications. This device utilizes emitter bal-  
lasting to achieve extreme ruggedness under  
severe operating conditions.  
1. Collector  
2. Emitter  
3. Base  
4. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
70  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
35  
V
4.0  
V
12  
A
PDISS  
TJ  
Power Dissipation  
175  
+200  
W
°
°
Junction Temperature  
Storage Temperature  
C
C
TSTG  
65 to +150  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
1.0  
°C/W  
1/4  
November 1992  

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